general features v ds =600v,i d =4a r ds(on) <2.5 ? @ v gs =10v high density cell design for ultra low rdson fully characterized avalanche voltage and current good stability and uniformity with high e as excellent package for good heat dissipation special process technology for high esd capability application power switching application hard switched and high frequency circuits uninterruptible power supply package marking and ordering information device marking device device package reel size tape width quantity to-252 - - 2500pcs absolute maximum ratings (t c =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 600 v gate-source voltage v gs 30 v drain current-continuous i d 4 a drain current-continuous(t c =100 ) i d (100 ) 3.?2 a pulsed drain current i dm 16 a maximum power dissipation p d w derating factor 0.46 w/ single pulse avalanche energy (note 5) e as 240 mj operating junction and st orage temperature range t j ,t stg -55 to 150 more semiconductor company limited http://www.moresemi.com 1/5 MSN6004D 600v(d-s) n-channel enhancement mode power mos fet MSN6004D MSN6004D lead free pin configuration 70 schematic diagram marking and pin assignment to-252-2l top view
thermal characteristic thermal resistance,junction-to-case (note 2) r jc 2.6 /w electrical characteristics (t c =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 600 - v zero gate voltage drain current i dss v ds =600v,v gs =0v - - 10 a gate-body leakage current i gss v gs =30v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 2 4 v drain-source on-state resistance r ds(on) v gs =10v, i d =2.0a - 2.5 ? forward transconductance g fs v ds =40v,i d =2a 4.7 - - s dynamic characteristics (note4) input capacitance c lss - 710 - pf output capacitance c oss - 65 - pf reverse transfer capacitance c rss v ds =25v,v gs =0v, f=1.0mhz - 14 - pf switching characteristics (note 4) turn-on delay time t d(on) - 20 - ns turn-on rise time t r - 55 - ns turn-off delay time t d(off) - 70 - ns turn-off fall time t f v dd =300v,i d =4a,r l =25 ? v gs =10v,r g =2.5 ? - 55 - ns total gate charge q g - 22 nc gate-source charge q gs - 4.8 nc gate-drain charge q gd v ds =480v,i d =4a, v gs =10v - 8.5 nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =4.0a - 1.4 v diode forward current (note 2) i s - - 4.0 a reverse recovery time t rr - 330 ns reverse recovery charge qrr tj = 25c, if = 4.0a di/dt = 100a/ s (note3) - 2.15 forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production 5. e as condition: j=25 ,v dd =50v,v g =10v,l=0.5mh,rg=25 ? more semiconductor company limited http://www.moresemi.com 2/5 MSN6004D c - - - - - -
typical electrical and the rmal characteristics (curves) more semiconductor company limited http://www.moresemi.com 3/5 MSN6004D c , c a p a c i t a n c e ( p f ) i d , d r a i n c u r r e n t ( a ) i d , d r a i n c u r r e n t ( a ) v t h , n o r m a l i z e d g a t e - s o u r c e t h r e s h o l d v o l t a g e r d s ( o n ) , n o r m a l i z e d r d s ( o n ) , o n - r e s i s t a n c e ( o h m s ) v d s , d r a i n - t o - s o u r c e v o l t a g e ( v ) f i g u r e 1 . o u t p u t c h a r a c t e r i s t i c s v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) f i g u r e 2 . t r a n s f e r c h a r a c t e r i s t i c s v d s , d r a i n - t o - s o u r c e v o l t a g e ( v ) f i g u r e 3 . c a p a c i t a n c e t j , j u n c t i o n t e m p e r a t u r e ( c ) f i g u r e 5 . g a t e t h r e s h o l d v a r i a t i o n w i t h t e m p e r a t u r e c i s s c o s s c r s s 9 0 0 7 5 0 6 0 0 4 5 0 3 0 0 1 5 0 0 0 5 1 0 1 5 2 0 2 5 3 . 0 0 . 0 2 . 5 2 . 0 1 . 5 1 . 0 0 . 5 v g s = 1 0 v i d = 2 a - 1 0 0 - 5 0 0 5 0 1 0 0 1 5 0 2 0 0 1 . 3 1 . 2 1 . 1 1 . 0 0 . 9 0 . 8 0 . 7 0 . 6 v d s = v g s i d = 2 5 0 a - 5 0 - 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 v s d , b o d y d i o d e f o r w a r d v o l t a g e ( v ) f i g u r e 6 . b o d y d i o d e f o r w a r d v o l t a g e v a r i a t i o n w i t h s o u r c e c u r r e n t t j , j u n c t i o n t e m p e r a t u r e ( c ) f i g u r e 4 . o n - r e s i s t a n c e v a r i a t i o n w i t h t e m p e r a t u r e i s , s o u r c e - d r a i n c u r r e n t ( a ) 0 . 4 0 . 6 0 . 8 1 . 0 1 0 0 1 0 - 1 1 0 1 1 . 2 1 . 6 1 . 4 v g s = 0 v 5 0 2 . 5 5 7 . 5 - 5 5 c 1 1 2 . 5 1 0 2 3 4 6 0 t j = 1 2 5 c 2 5 c 3 . 5 2 . 8 2 . 1 1 . 4 0 . 7 0 0 2 . 5 5 1 0 7 . 5 1 2 . 5 1 5 4 . 2 v g s = 4 v v g s = 1 0 , 9 , 8 , 6 v v g s = 5 v c , c a p a c i t a n c e ( p f ) i d , d r a i n c u r r e n t ( a ) i d , d r a i n c u r r e n t ( a ) v t h , n o r m a l i z e d g a t e - s o u r c e t h r e s h o l d v o l t a g e r d s ( o n ) , n o r m a l i z e d r d s ( o n ) , o n - r e s i s t a n c e ( o h m s ) v d s , d r a i n - t o - s o u r c e v o l t a g e ( v ) f i g u r e 1 . o u t p u t c h a r a c t e r i s t i c s v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) f i g u r e 2 . t r a n s f e r c h a r a c t e r i s t i c s t j , j u n c t i o n t e m p e r a t u r e ( c ) f i g u r e 5 . g a t e t h r e s h o l d v a r i a t i o n w i t h t e m p e r a t u r e v d s , d r a i n - t o - s o u r c e v o l t a g e ( v ) f i g u r e 3 . c a p a c i t a n c e 1 2 0 0 0 5 1 0 1 5 2 0 2 5 c i s s c o s s c r s s 1 0 0 0 8 0 0 6 0 0 4 0 0 2 0 0 0 1 . 3 1 . 2 1 . 1 1 . 0 0 . 9 0 . 8 0 . 7 0 . 6 v d s = v g s i d = 2 5 0 a - 5 0 - 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 v s d , b o d y d i o d e f o r w a r d v o l t a g e ( v ) f i g u r e 6 . b o d y d i o d e f o r w a r d v o l t a g e v a r i a t i o n w i t h s o u r c e c u r r e n t t j , j u n c t i o n t e m p e r a t u r e ( c ) f i g u r e 4 . o n - r e s i s t a n c e v a r i a t i o n w i t h t e m p e r a t u r e 1 2 3 4 6 5 9 7 . 5 - 5 5 c 2 5 c 1 . 5 3 4 . 5 6 0 t j = 1 2 5 c i s , s o u r c e - d r a i n c u r r e n t ( a ) 0 . 4 0 . 7 1 . 0 1 . 3 1 0 0 1 0 - 1 1 0 1 1 . 7 2 . 0 v g s = 0 v 2 0 0 . 0 5 1 0 2 0 1 5 2 5 3 0 v g s = 5 v v g s = 1 0 , 8 , 7 v 1 4 3 6 5 3 . 0 0 . 0 2 . 5 2 . 0 1 . 5 1 . 0 0 . 5 v g s = 1 0 v i d = 2 a - 1 0 0 - 5 0 0 5 0 1 0 0 1 5 0 2 0 0 c , c a p a c i t a n c e ( p f ) i d , d r a i n c u r r e n t ( a ) i d , d r a i n c u r r e n t ( a ) v t h , n o r m a l i z e d g a t e - s o u r c e t h r e s h o l d v o l t a g e r d s ( o n ) , n o r m a l i z e d r d s ( o n ) , o n - r e s i s t a n c e ( o h m s ) v d s , d r a i n - t o - s o u r c e v o l t a g e ( v ) f i g u r e 1 . o u t p u t c h a r a c t e r i s t i c s v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) f i g u r e 2 . t r a n s f e r c h a r a c t e r i s t i c s t j , j u n c t i o n t e m p e r a t u r e ( c ) f i g u r e 5 . g a t e t h r e s h o l d v a r i a t i o n w i t h t e m p e r a t u r e v d s , d r a i n - t o - s o u r c e v o l t a g e ( v ) f i g u r e 3 . c a p a c i t a n c e 1 2 0 0 0 5 1 0 1 5 2 0 2 5 c i s s c o s s c r s s 1 0 0 0 8 0 0 6 0 0 4 0 0 2 0 0 0 1 . 3 1 . 2 1 . 1 1 . 0 0 . 9 0 . 8 0 . 7 0 . 6 v d s = v g s i d = 2 5 0 a - 5 0 - 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 v s d , b o d y d i o d e f o r w a r d v o l t a g e ( v ) f i g u r e 6 . b o d y d i o d e f o r w a r d v o l t a g e v a r i a t i o n w i t h s o u r c e c u r r e n t t j , j u n c t i o n t e m p e r a t u r e ( c ) f i g u r e 4 . o n - r e s i s t a n c e v a r i a t i o n w i t h t e m p e r a t u r e 1 2 3 4 6 5 9 7 . 5 - 5 5 c 2 5 c 1 . 5 3 4 . 5 6 0 t j = 1 2 5 c i s , s o u r c e - d r a i n c u r r e n t ( a ) 0 . 4 0 . 7 1 . 0 1 . 3 1 0 0 1 0 - 1 1 0 1 1 . 7 2 . 0 v g s = 0 v 2 0 0 . 0 5 1 0 2 0 1 5 2 5 3 0 v g s = 5 v v g s = 1 0 , 8 , 7 v 1 4 3 6 5 3 . 0 0 . 0 2 . 5 2 . 0 1 . 5 1 . 0 0 . 5 v g s = 1 0 v i d = 2 a - 1 0 0 - 5 0 0 5 0 1 0 0 1 5 0 2 0 0
more semiconductor company limited http://www.moresemi.com 4/5 MSN6004D v g s , g a t e t o s o u r c e v o l t a g e ( v ) q g , t o t a l g a t e c h a r g e ( n c ) f i g u r e 7 . g a t e c h a r g e v d s , d r a i n - s o u r c e v o l t a g e ( v ) f i g u r e 8 . m a x i m u m s a f e o p e r a t i n g a r e a i d , d r a i n c u r r e n t ( a ) f i g u r e 9 . s w i t c h i n g t e s t c i r c u i t f i g u r e 1 0 . s w i t c h i n g w a v e f o r m s t v v t t d ( o n ) o u t i n o n r 1 0 % t d ( o f f ) 9 0 % 1 0 % 1 0 % 5 0 % 5 0 % 9 0 % t o f f t f 9 0 % p u l s e w i d t h i n v e r t e d v d d r d v v r s v g g s i n g e n o u t l r ( t ) , n o r m a l i z e d e f f e c t i v e t r a n s i e n t t h e r m a l i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) f i g u r e 1 1 . n o r m a l i z e d t h e r m a l t r a n s i e n t i m p e d a n c e c u r v e 1 0 1 1 0 2 1 0 0 1 0 3 1 0 1 1 0 0 1 0 - 1 1 0 m s 1 m s d c 1 0 0 m s r d s ( o n ) l i m i t s i n g l e p u l s e t c = 2 5 c t j = 1 7 5 c 1 0 - 2 1 0 8 6 4 2 0 0 2 4 6 1 0 8 v d s = 4 8 0 v i d = 4 a 1 0 0 1 0 - 1 1 0 - 2 1 0 0 1 0 1 1 0 - 1 1 0 - 2 1 0 - 3 1 0 - 4 1 0 - 5 p d m t 1 t 2 1 . r c j a ( t ) = r ( t ) * r c j a 2 . r c j a = s e e d a t a s h e e t 3 . t j m - t a = p * r c j c ( t ) 4 . d u t y c y c l e , d = t 1 / t 2 s i n g l e p u l s e 0 . 0 1 0 . 0 2 0 . 0 5 0 . 1 0 . 2 d = 0 . 5 v g s , g a t e t o s o u r c e v o l t a g e ( v ) q g , t o t a l g a t e c h a r g e ( n c ) f i g u r e 7 . g a t e c h a r g e v d s , d r a i n - s o u r c e v o l t a g e ( v ) f i g u r e 8 . m a x i m u m s a f e o p e r a t i n g a r e a i d , d r a i n c u r r e n t ( a ) f i g u r e 9 . s w i t c h i n g t e s t c i r c u i t f i g u r e 1 0 . s w i t c h i n g w a v e f o r m s t v v t t d ( o n ) o u t i n o n r 1 0 % t d ( o f f ) 9 0 % 1 0 % 1 0 % 5 0 % 5 0 % 9 0 % t o f f t f 9 0 % p u l s e w i d t h i n v e r t e d v d d r d v v r s v g g s i n g e n o u t l r ( t ) , n o r m a l i z e d e f f e c t i v e t r a n s i e n t t h e r m a l i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) f i g u r e 1 1 . n o r m a l i z e d t h e r m a l t r a n s i e n t i m p e d a n c e c u r v e 1 0 1 1 0 2 1 0 0 1 0 3 1 0 1 1 0 0 1 0 - 1 1 0 m s 1 m s d c 1 0 0 m s r d s ( o n ) l i m i t s i n g l e p u l s e t c = 2 5 c t j = 1 7 5 c 1 0 - 2 1 0 8 6 4 2 0 0 2 4 6 1 0 8 v d s = 4 8 0 v i d = 4 a 1 0 0 1 0 - 1 1 0 - 2 1 0 0 1 0 1 1 0 - 1 1 0 - 2 1 0 - 3 1 0 - 4 1 0 - 5 p d m t 1 t 2 1 . r c j a ( t ) = r ( t ) * r c j a 2 . r c j a = s e e d a t a s h e e t 3 . t j m - t a = p * r c j c ( t ) 4 . d u t y c y c l e , d = t 1 / t 2 s i n g l e p u l s e 0 . 0 1 0 . 0 2 0 . 0 5 0 . 1 0 . 2 d = 0 . 5
more semiconductor company limited http://www.moresemi.com 5/5 MSN6004D to-252 package information dimensions in millimeters dimensions in inches symbol min. max. min. max. a 2.200 2.400 0.087 0.094 a1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 d 6.500 6.700 0.256 0.264 d1 5.100 5.460 0.201 0.215 d2 4.830 typ. 0.190 typ. e 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 l 9.800 10.400 0.386 0.409 l1 2.900 typ. 0.114 typ. l2 1.400 1.700 0.055 0.067 l3 1.600 typ. 0.063 typ. l4 0.600 1.000 0.024 0.039 1.100 1.300 0.043 0.051 0 8 0 8 h 0.000 0.300 0.000 0.012 v 5.350 typ. 0.211 typ.
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